npn 2N3700 17/10/2012 comset semiconductors 1/3 s s i i l l i i c c o o n n p p l l a a n n a a r r e e p p i i t t a a x x i i a a l l t t r r a a n n s s i i s s t t o o r r s s the 2N3700 are npn transistors mounted in to-18 metal package with the collector connected to the case . they are intended for small signal, low noise industrial applications. compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage 80 v v cbo collector-base voltage 140 v v ebo emitter-base voltage 7 v i c collector current 1 a p d total power dissipation @ t amb = 25 0.5 w @ t case = 25 1.8 @ t case <100 1 t j junction temperature 200 c t stg storage temperature range -65 to +200 c thermal characteristics symbol ratings value unit r thj-a thermal resistance, junction-ambient 350 c/ w r thj-c thermal resistance, junction-case 97 c/ w
npn 2N3700 17/10/2012 comset semiconductors 2 | 3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cbo collector cutoff current v cb =90 v, i e =0v - - 10 na i cbo collector cutoff current v cb =90 v, i e =0v, t j =150c - - 10 a i ebo emitter cutoff current v be =5.0 v, i c =0 - - 10 na v ceo (*) collector emitter breakdown voltage i c =30 ma, i b =0 80 - - v v cbo collector base breakdown voltage i c =100 a, i e =0 140 - - v v ebo emitter base breakdown voltage i e =100 a, i c =0 7 - - v h fe (*) dc current gain i c =0.1 ma, v ce =10 v 50 - - - i c =10 ma, v ce =10 v 90 - - i c =150 ma, v ce =10 v 100 - 300 i c =500 ma, v ce =10 v 50 - - i c =1a, v ce =10 v 15 - - i c =150 ma, v ce =10 v t amb = -55 40 - - v ce(sat) (*) collector-emitter saturation voltage i c =150 ma, i b =15 ma - - 0.2 v i c =500 ma, i b =50 ma - - 0.5 v be(sat) (*) base-emitter saturation voltage i c =150 ma, i b =15 ma - - 1.1 f t transition frequency i c =50 ma, v ce =10 v f= 20mhz - 100 - mhz h fe small signal current gain i c =1 ma, v ce =5.0 v f= 1 khz 80 - 400 - c cbo collector-base capacitance i e = 0 ,v cb =10 v f = 1mhz - 12 - pf c ebo emitter-base capacitance i c = 0 ,v eb =0.5 v f = 1mhz - 60 - pf r bb? ,c b?c feedback time constant i c =10 ma, v ce =10 v f= 4 mhz 25 - 400 ps (*) pulse conditions : tp < 300 s, =1%
npn 2N3700 17/10/2012 comset semiconductors 3 | 3 mechanical data case to-18 revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 12.7 - b - 0.49 c 0.9 - d - 5.3 e - 4.9 f - 5.8 g 2.54 - h - 1.2 i - 1.16 l 45 - pin 1 : emitter pin 2 : base pin 3 : collector case : collector
|
